View IRFZ44ESPBF_5214413.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRFZ44ESPBF irfz44elpbf hexfet ? power mosfet pd - 95572 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 48 i d @ t c = 100c continuous drain current, v gs @ 10v 34 a i dm pulsed drain current 192 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 220 mj i ar avalanche current 29 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 1.4 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 advanced process technology surface mount (irfz44es) low-profile through-hole (irfz44el) 175c operating temperature fast switching fully avalanche rated lead-free fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irfz44el) is available for low-profile applications. description v dss = 60v r ds(on) = 0.023 ? i d = 48a 2 d pak to-262 s d g
irfz44es/lpbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 29a, v gs = 0v t rr reverse recovery time ??? 69 104 ns t j = 25c, i f = 29a q rr reverse recovery charge ??? 177 266 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 48 192 starting t j = 25c, l = 520h r g = 25 ? , i as = 29a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 29a di/d
320a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. uses irfz44e data and test conditions ** when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended soldering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a dv (br)dss /dt j breakdown voltage temp. coefficient ??? 0.063 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.023 ? v gs = 10v, i d = 29a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 15 ??? ??? s v ds = 30v, i d = 29a ??? ??? 25 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 60 i d = 29a q gs gate-to-source charge ??? ??? 13 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 23 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 30v t r rise time ??? 60 ??? i d = 29a t d(off) turn-off delay time ??? 70 ??? r g = 15 ? t f fall time ??? 70 ??? r d = 1.1 ? , see fig. 10 between lead, ??? ??? and center of die contact c iss input capacitance ??? 1360 ??? v gs = 0v c oss output capacitance ??? 420 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 160 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) ns i dss drain-to-source leakage current nh l s internal source inductance
irfz44es/lpbf www.irf.com 3 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v

1 10 100 1000 4 5 6 7 8 9 10 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 175 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 48a

irfz44es/lpbf 4 www.irf.com

! !
1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms

"#
$ ! !
1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 29 v = 30v ds v = 48v ds 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
irfz44es/lpbf www.irf.com 5 "#

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f %& "#
'& ()*

1 0.1 % + - 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d "#

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f %& "#
'& ()*

1 0.1 % 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfz44es/lpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !
-! %& .(
&%& .(
&
t p v (br)dss i as "#
$& '
r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 21a 29a
irfz44es/lpbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /'0' 1
?

!" ? #$
"%# ?
!"&
"'#
(( ? )

*&
#"&
* #
? +,
#" &
# ? -& .# ? +#/# &
# *&
# $ 1
irfz44es/lpbf 8 www.irf.com

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos i ti on indicates "l ead- f ree" f 530s t his is an irf530s wit h l ot code 8024 as s e mb led on ww 02, 2000 in the assembly line "l" as s e mb l y lot code int ernational rectifier logo part numbe r dat e code ye ar 0 = 2000 we e k 02 line l f530s a = assembly site code we e k 02 p = designat es le ad-f ree product (optional) rectifier int ernat ional logo lot code as s e mb l y year 0 = 2000 dat e code part number
irfz44es/lpbf www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rect if ier int ernational as s e mb le d on ww 19, 1997 note: "p" in assembly line pos i ti on i ndi cates "l ead- f r ee" in the assembly line "c" logo t his is an irl3103l l ot code 1789 example: line c date code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int er nat ional rect if ier product (optional) p = de s i gnat e s l e ad-f r e e a = assembly site code week 19 ye ar 7 = 1997 dat e code or
irfz44es/lpbf 10 www.irf.com

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04

▲Up To Search▲

Price & Availability of IRFZ44ESPBF

	To Download IRFZ44ESPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .